Modeling of fast conductivity phenomena in semiconductors

Maurice Weiner, Lawrence E. Kingsley, Terrence Burke, Kevin Fonda, Robert J. Youmans, Hardev Singh, Robert A. Pastore

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A simple transmission line model, which seeks to explain fast conductivity phenomena in semiconductors, such as photoconductivity or avalanching (induced by either light or displacement current waves), is proposed. The model relies on breaking up the semiconductor drift space into small cells, each of which contains an imaginary transmission line element so as to allow an electromagnetic wave to propagate away from the generated plasma. The same transmission line may be used to convey light energy produced in the semiconductor. The transmission line also serves as the energy storage element. Time varying nodal resistors, located at the transmission line junctions, control the conductivity. The nodal resistors embody the physics of the semiconductor, whereas the transmission line matrix accounts for energy spread. Slower semiconductor mechanisms, such as carrier drift, may be easily incorporated into the formalism, if necessary. The model points out the importance of triggering either an avalanche or displacement current wave in regions where the static field is high. Under certain conditions the model predicts a growing electromagnetic wave with sufficient amplitude to sustain avalanching.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsWilliam R. Donaldson
Pages38-49
Number of pages12
StatePublished - 1995
EventOptically Activated Switching IV - Boston, MA, USA
Duration: 31 Oct 19941 Nov 1994

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2343
ISSN (Print)0277-786X

Conference

ConferenceOptically Activated Switching IV
CityBoston, MA, USA
Period31/10/941/11/94

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