Molecular dynamics simulation of the thermal resistance of carbon nanotube - Substrate interfaces

Daniel J. Rogers, Jianmin Qu, Matthew Yao

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

The interfacial thermal resistance (ITR) between a carbon nanotube (CNT) and adjoining carbon, silicon, or copper substrate is investigated through non-equilibrium molecular dynamics simulation (NEMD). The theoretical phonon transmission also is calculated using a simplified form of the diffuse mismatch model (DMM) with direct simulation of the phonon density of states (DOS) under quasi-harmonic approximation. The results of theory and simulation are reported as a function of temperature in order to estimate the importance of anharmonicity and inelastic scattering. At 300K, the thermal conductance of CNT-substrate interfaces is ≃1500 W/mm2K for diamond carbon, ≃500 W/mm2K for silicon, and ≃250 W/mm2K for copper.

Original languageEnglish
Title of host publicationProceedings of the ASME InterPack Conference 2009, IPACK2009
Pages55-61
Number of pages7
DOIs
StatePublished - 2010
Event2009 ASME InterPack Conference, IPACK2009 - San Francisco, CA, United States
Duration: 19 Jul 200923 Jul 2009

Publication series

NameProceedings of the ASME InterPack Conference 2009, IPACK2009
Volume2

Conference

Conference2009 ASME InterPack Conference, IPACK2009
Country/TerritoryUnited States
CitySan Francisco, CA
Period19/07/0923/07/09

Keywords

  • Carbon nanotube
  • Diffuse mismatch model
  • Interfacial thermal resistance
  • Molecular dynamics
  • Phonon dispersion

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