Negatively charged donor centers in ultrathin ZnSe:N layers

S. Strauf, P. Michler, J. Gutowski, M. Klude, D. Hommel, D. Wolverson, J. J. Davies

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1 Scopus citations

Abstract

Pseudomorphically grown p-ZnSe:N layers being as thin as 100, 20, 10 and 5 nm embedded in ZnMgSSe barriers were investigated by means of photoluminescence and spin-flip-Raman (SFR) scattering spectroscopy. A new donor-acceptor-pair (DAP) band has been observed involving a very shallow donor with a binding energy of (19 ± 2) meV and the well-known N acceptor on Se site. Further evidence for a new donor center is given by transitions in angle-dependent SFR scattering measurements which correspond to an isotropic (donor-like) g-value of (1.49 ± 0.03). The 19 meV donor is interpreted as the negatively charged state of the usually found 52 meV deep donor in ZnSe:N. This is supported by the temperature behavior of the DAP band and, further, by its pronounced appearance for resonant excitation into the barriers quite similar to the behavior of trions.

Original languageEnglish
Pages (from-to)245-250
Number of pages6
JournalPhysica Status Solidi (B) Basic Research
Volume229
Issue number1
DOIs
StatePublished - 2002

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