TY - JOUR
T1 - Optical Anisotropic Properties of m-Plane GaN Film Grown by Metalorganic Chemical Vapor Deposition
AU - Jieying, Kong
AU - Rong, Zhang
AU - Yong, Zhang
AU - Chengxiang, Liu
AU - Zili, Xie
AU - Bin, Liu
AU - Shining, Zhu
AU - Naiben, Min
AU - Youdou, Zheng
PY - 2007/6
Y1 - 2007/6
N2 - Spontaneous and piezoelectric polarization could lower the efficiency of GaN-based light-emitting diodes. In order to eliminate or reduce this undesirable effect, m-plane GaN film was prepared by metalorganic chemical vapor deposition (MOCVD) on LiAlO2(100) substrate with a GaN buffer layer. Since the c axis of the m-plane GaN lays in the grown plane, the breakage of in-plane symmetry gave rise to an optical anisotropy, which was revealed by a difference in refractive indexes of E-field parallel and perpendicular to the c axis of the m-plane GaN measured by polarized reflection measurement. In addition, in-plane strain anisotropy due to the lattice mismatch between the GaN film and the LiAlO2 substrate changed the Electronic Band Structure (EBS). The change of EBS also led to an in-plane optical anisotropy. Polarized absorption and Photoluminescence (PL) measurements showed a split in energy of 32 meV for optical absorption edge and 37 meV for PL peak energy respectively.
AB - Spontaneous and piezoelectric polarization could lower the efficiency of GaN-based light-emitting diodes. In order to eliminate or reduce this undesirable effect, m-plane GaN film was prepared by metalorganic chemical vapor deposition (MOCVD) on LiAlO2(100) substrate with a GaN buffer layer. Since the c axis of the m-plane GaN lays in the grown plane, the breakage of in-plane symmetry gave rise to an optical anisotropy, which was revealed by a difference in refractive indexes of E-field parallel and perpendicular to the c axis of the m-plane GaN measured by polarized reflection measurement. In addition, in-plane strain anisotropy due to the lattice mismatch between the GaN film and the LiAlO2 substrate changed the Electronic Band Structure (EBS). The change of EBS also led to an in-plane optical anisotropy. Polarized absorption and Photoluminescence (PL) measurements showed a split in energy of 32 meV for optical absorption edge and 37 meV for PL peak energy respectively.
KW - GaN
KW - O472.3
KW - TN304.23
KW - anisotropy
KW - electronic band structure
KW - polarization
KW - split
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U2 - 10.1016/S1002-0721(07)60504-3
DO - 10.1016/S1002-0721(07)60504-3
M3 - Article
AN - SCOPUS:36148991845
SN - 1002-0721
VL - 25
SP - 356
EP - 359
JO - Journal of Rare Earths
JF - Journal of Rare Earths
IS - SUPPL. 2
ER -