TY - JOUR
T1 - Optical spectroscopy of Mg- and C-related donor and acceptor levels in GaN grown by MBE
AU - Strauf, S.
AU - Michler, P.
AU - Gutowski, J.
AU - Birkle, U.
AU - Fehrer, M.
AU - Einfeldt, S.
AU - Hommel, D.
PY - 1999/11
Y1 - 1999/11
N2 - We present photoreflectance (PR) in combination with temperature and density dependent photoluminescence (PL) on undoped as well as on Mg- and C-doped GaN grown by molecular beam epitaxy (MBE). We determined the binding energy of the free A-exciton, the residual donor-bound exciton and the Mg-acceptor-bound exciton to (26 ± 1), (5 ± 1) and (18 ± 1) meV, respectively. In n-type GaN a residual DAP band appears independent of the particular type of dopant. Free-hole concentrations up to 1018 cm-3 in MBE grown p-GaN:Mg were achieved without generation of deep compensating donors. Moreover, we found evidence for a second DAP series involving a shallow compensating donor level built in along with Mg doping. The correlation of different DAP bands to the respective type of conductivity opens an alternative way to control the p-type doping in GaN:Mg without the need for electrical contacting.
AB - We present photoreflectance (PR) in combination with temperature and density dependent photoluminescence (PL) on undoped as well as on Mg- and C-doped GaN grown by molecular beam epitaxy (MBE). We determined the binding energy of the free A-exciton, the residual donor-bound exciton and the Mg-acceptor-bound exciton to (26 ± 1), (5 ± 1) and (18 ± 1) meV, respectively. In n-type GaN a residual DAP band appears independent of the particular type of dopant. Free-hole concentrations up to 1018 cm-3 in MBE grown p-GaN:Mg were achieved without generation of deep compensating donors. Moreover, we found evidence for a second DAP series involving a shallow compensating donor level built in along with Mg doping. The correlation of different DAP bands to the respective type of conductivity opens an alternative way to control the p-type doping in GaN:Mg without the need for electrical contacting.
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U2 - 10.1002/(SICI)1521-3951(199911)216:1<557::AID-PSSB557>3.0.CO;2-4
DO - 10.1002/(SICI)1521-3951(199911)216:1<557::AID-PSSB557>3.0.CO;2-4
M3 - Article
AN - SCOPUS:0033242990
SN - 0370-1972
VL - 216
SP - 557
EP - 560
JO - Physica Status Solidi (B) Basic Research
JF - Physica Status Solidi (B) Basic Research
IS - 1
ER -