TY - JOUR
T1 - Optimization of Dielectric Material Stoichiometry for High-Reliability Capacitive MEMS Switches
AU - Tavassolian, Negar
AU - Koutsoureli, Matroni
AU - Papaioannou, George
AU - Papapolymerou, John
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/3
Y1 - 2016/3
N2 - This letter examines the effect of dielectric material stoichiometry and substrate temperature on the charging performance and reliability of capacitive MEMS switches with silicon nitride. Various dielectric stoichiometries were obtained by varying the deposition temperature and gas flow ratios during the PECVD deposition process. Results from both MIM capacitors and MEMS switches have shown that charging is mitigated in silicon nitride films deposited at 150 °C with a high ratio of nitrogen to silicon content (N/Si=0.98).
AB - This letter examines the effect of dielectric material stoichiometry and substrate temperature on the charging performance and reliability of capacitive MEMS switches with silicon nitride. Various dielectric stoichiometries were obtained by varying the deposition temperature and gas flow ratios during the PECVD deposition process. Results from both MIM capacitors and MEMS switches have shown that charging is mitigated in silicon nitride films deposited at 150 °C with a high ratio of nitrogen to silicon content (N/Si=0.98).
KW - Capacitive MEMS switches
KW - dielectric charging
KW - silicon nitride
KW - stoichiometry
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U2 - 10.1109/LMWC.2016.2524596
DO - 10.1109/LMWC.2016.2524596
M3 - Article
AN - SCOPUS:84976232099
SN - 1531-1309
VL - 26
SP - 174
EP - 176
JO - IEEE Microwave and Wireless Components Letters
JF - IEEE Microwave and Wireless Components Letters
IS - 3
M1 - 7407296
ER -