Optimization of Dielectric Material Stoichiometry for High-Reliability Capacitive MEMS Switches

Negar Tavassolian, Matroni Koutsoureli, George Papaioannou, John Papapolymerou

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

This letter examines the effect of dielectric material stoichiometry and substrate temperature on the charging performance and reliability of capacitive MEMS switches with silicon nitride. Various dielectric stoichiometries were obtained by varying the deposition temperature and gas flow ratios during the PECVD deposition process. Results from both MIM capacitors and MEMS switches have shown that charging is mitigated in silicon nitride films deposited at 150 °C with a high ratio of nitrogen to silicon content (N/Si=0.98).

Original languageEnglish
Article number7407296
Pages (from-to)174-176
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume26
Issue number3
DOIs
StatePublished - Mar 2016

Keywords

  • Capacitive MEMS switches
  • dielectric charging
  • silicon nitride
  • stoichiometry

Fingerprint

Dive into the research topics of 'Optimization of Dielectric Material Stoichiometry for High-Reliability Capacitive MEMS Switches'. Together they form a unique fingerprint.

Cite this