Optimization of Dielectric Material Stoichiometry for High-Reliability Capacitive MEMS Switches

Negar Tavassolian; Matroni Koutsoureli; George Papaioannou; John Papapolymerou

doi:10.1109/LMWC.2016.2524596

Optimization of Dielectric Material Stoichiometry for High-Reliability Capacitive MEMS Switches

Negar Tavassolian
, Matroni Koutsoureli
, George Papaioannou
, John Papapolymerou

Department of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

This letter examines the effect of dielectric material stoichiometry and substrate temperature on the charging performance and reliability of capacitive MEMS switches with silicon nitride. Various dielectric stoichiometries were obtained by varying the deposition temperature and gas flow ratios during the PECVD deposition process. Results from both MIM capacitors and MEMS switches have shown that charging is mitigated in silicon nitride films deposited at 150 °C with a high ratio of nitrogen to silicon content (N/Si=0.98).

Original language	English
Article number	7407296
Pages (from-to)	174-176
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	26
Issue number	3
DOIs	https://doi.org/10.1109/LMWC.2016.2524596
State	Published - Mar 2016

Keywords

Capacitive MEMS switches
dielectric charging
silicon nitride
stoichiometry

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10.1109/LMWC.2016.2524596

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abstract = "This letter examines the effect of dielectric material stoichiometry and substrate temperature on the charging performance and reliability of capacitive MEMS switches with silicon nitride. Various dielectric stoichiometries were obtained by varying the deposition temperature and gas flow ratios during the PECVD deposition process. Results from both MIM capacitors and MEMS switches have shown that charging is mitigated in silicon nitride films deposited at 150 °C with a high ratio of nitrogen to silicon content (N/Si=0.98).",

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AU - Papapolymerou, John

PY - 2016/3

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AB - This letter examines the effect of dielectric material stoichiometry and substrate temperature on the charging performance and reliability of capacitive MEMS switches with silicon nitride. Various dielectric stoichiometries were obtained by varying the deposition temperature and gas flow ratios during the PECVD deposition process. Results from both MIM capacitors and MEMS switches have shown that charging is mitigated in silicon nitride films deposited at 150 °C with a high ratio of nitrogen to silicon content (N/Si=0.98).

KW - Capacitive MEMS switches

KW - dielectric charging

KW - silicon nitride

KW - stoichiometry

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Optimization of Dielectric Material Stoichiometry for High-Reliability Capacitive MEMS Switches

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