Overview of Millimeter-Wave Wireless Interconnect: (Invited)

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1 Scopus citations

Abstract

This paper presents the overview of solid-state-based millimeter-wave wireless interconnects. Conventional mechanical connectors face issues from long-term reliability, signal-integrity, environmental hazard, and large form-factor. To remove the physical connection, direct baseband couplings via capacitors, inductors, and transmission lines, and carrier-modulation couplings via antennas have been explored for the past 40 years. The focus of this work is millimeter-wave wireless interconnects implemented in advanced CMOS technologies. Carrier frequencies ranging from 60 GHz to 150 GHz, and modulation schemes including on-off-keying and multi-level pulse amplitude modulation are demonstrated to achieve data rates of 6 Gb/s to 30 Gb/s with the energy efficiency less than 10 pJ/b.

Original languageEnglish
Title of host publication2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
ISBN (Electronic)9781665433914
DOIs
StatePublished - 25 Aug 2021
Event2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 - Hualien, Taiwan, Province of China
Duration: 25 Aug 202127 Aug 2021

Publication series

Name2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021

Conference

Conference2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
Country/TerritoryTaiwan, Province of China
CityHualien
Period25/08/2127/08/21

Keywords

  • Contactless Connector
  • Digital Pre-Distortion
  • MOS
  • Millimeter-Wave Wireless Interconnect
  • Pulse Amplitude Modulation

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