Abstract
This paper presents the overview of solid-state-based millimeter-wave wireless interconnects. Conventional mechanical connectors face issues from long-term reliability, signal-integrity, environmental hazard, and large form-factor. To remove the physical connection, direct baseband couplings via capacitors, inductors, and transmission lines, and carrier-modulation couplings via antennas have been explored for the past 40 years. The focus of this work is millimeter-wave wireless interconnects implemented in advanced CMOS technologies. Carrier frequencies ranging from 60 GHz to 150 GHz, and modulation schemes including on-off-keying and multi-level pulse amplitude modulation are demonstrated to achieve data rates of 6 Gb/s to 30 Gb/s with the energy efficiency less than 10 pJ/b.
| Original language | English |
|---|---|
| Title of host publication | 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 |
| ISBN (Electronic) | 9781665433914 |
| DOIs | |
| State | Published - 25 Aug 2021 |
| Event | 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 - Hualien, Taiwan, Province of China Duration: 25 Aug 2021 → 27 Aug 2021 |
Publication series
| Name | 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 |
|---|
Conference
| Conference | 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 |
|---|---|
| Country/Territory | Taiwan, Province of China |
| City | Hualien |
| Period | 25/08/21 → 27/08/21 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Keywords
- Contactless Connector
- Digital Pre-Distortion
- MOS
- Millimeter-Wave Wireless Interconnect
- Pulse Amplitude Modulation
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