Oxidation studies of aluminum-implanted NBD 200 silicon nitride

Priya Mukundhan, Henry H. Du, Stephen P. Withrow

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

The effects of aluminum-ion-implantation on the oxidation behavior of NBD 200 Si3N4 were investigated over an implant concentration range of 0-30 at.%, at 800°-1100°C, in 1 atm dry O2. Oxidation of both unimplanted and implanted samples follows a parabolic rate law. The parabolic rate constant decreases and the activation energy increases with aluminum concentration. Smooth and crack-free oxides are formed under the combination of high implant concentrations and low oxidation temperatures. Outward diffusion of Mg2+ from the bulk of NBD 200 to the oxide layer remains the rate-limiting step for aluminum-implanted samples. The enhancement of the oxidation resistance of NBD 200 by aluminum implantation is attributed to the retardation of the outward diffusion of Mg2+.

Original languageEnglish
Pages (from-to)865-872
Number of pages8
JournalJournal of the American Ceramic Society
Volume85
Issue number4
DOIs
StatePublished - Apr 2002

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