Oxidation studies of aluminum-implanted NBD 200 silicon nitride

Priya Mukundhan; Henry H. Du; Stephen P. Withrow

doi:10.1111/j.1151-2916.2002.tb00185.x

Oxidation studies of aluminum-implanted NBD 200 silicon nitride

Priya Mukundhan, Henry H. Du, Stephen P. Withrow

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7 Scopus citations

Abstract

The effects of aluminum-ion-implantation on the oxidation behavior of NBD 200 Si₃N₄ were investigated over an implant concentration range of 0-30 at.%, at 800°-1100°C, in 1 atm dry O₂. Oxidation of both unimplanted and implanted samples follows a parabolic rate law. The parabolic rate constant decreases and the activation energy increases with aluminum concentration. Smooth and crack-free oxides are formed under the combination of high implant concentrations and low oxidation temperatures. Outward diffusion of Mg²⁺ from the bulk of NBD 200 to the oxide layer remains the rate-limiting step for aluminum-implanted samples. The enhancement of the oxidation resistance of NBD 200 by aluminum implantation is attributed to the retardation of the outward diffusion of Mg²⁺.

Original language	English
Pages (from-to)	865-872
Number of pages	8
Journal	Journal of the American Ceramic Society
Volume	85
Issue number	4
DOIs	https://doi.org/10.1111/j.1151-2916.2002.tb00185.x
State	Published - Apr 2002

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10.1111/j.1151-2916.2002.tb00185.x

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title = "Oxidation studies of aluminum-implanted NBD 200 silicon nitride",

abstract = "The effects of aluminum-ion-implantation on the oxidation behavior of NBD 200 Si3N4 were investigated over an implant concentration range of 0-30 at.\%, at 800°-1100°C, in 1 atm dry O2. Oxidation of both unimplanted and implanted samples follows a parabolic rate law. The parabolic rate constant decreases and the activation energy increases with aluminum concentration. Smooth and crack-free oxides are formed under the combination of high implant concentrations and low oxidation temperatures. Outward diffusion of Mg2+ from the bulk of NBD 200 to the oxide layer remains the rate-limiting step for aluminum-implanted samples. The enhancement of the oxidation resistance of NBD 200 by aluminum implantation is attributed to the retardation of the outward diffusion of Mg2+.",

author = "Priya Mukundhan and Du, \{Henry H.\} and Withrow, \{Stephen P.\}",

year = "2002",

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doi = "10.1111/j.1151-2916.2002.tb00185.x",

language = "English",

volume = "85",

pages = "865--872",

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T1 - Oxidation studies of aluminum-implanted NBD 200 silicon nitride

AU - Mukundhan, Priya

AU - Du, Henry H.

AU - Withrow, Stephen P.

PY - 2002/4

Y1 - 2002/4

N2 - The effects of aluminum-ion-implantation on the oxidation behavior of NBD 200 Si3N4 were investigated over an implant concentration range of 0-30 at.%, at 800°-1100°C, in 1 atm dry O2. Oxidation of both unimplanted and implanted samples follows a parabolic rate law. The parabolic rate constant decreases and the activation energy increases with aluminum concentration. Smooth and crack-free oxides are formed under the combination of high implant concentrations and low oxidation temperatures. Outward diffusion of Mg2+ from the bulk of NBD 200 to the oxide layer remains the rate-limiting step for aluminum-implanted samples. The enhancement of the oxidation resistance of NBD 200 by aluminum implantation is attributed to the retardation of the outward diffusion of Mg2+.

AB - The effects of aluminum-ion-implantation on the oxidation behavior of NBD 200 Si3N4 were investigated over an implant concentration range of 0-30 at.%, at 800°-1100°C, in 1 atm dry O2. Oxidation of both unimplanted and implanted samples follows a parabolic rate law. The parabolic rate constant decreases and the activation energy increases with aluminum concentration. Smooth and crack-free oxides are formed under the combination of high implant concentrations and low oxidation temperatures. Outward diffusion of Mg2+ from the bulk of NBD 200 to the oxide layer remains the rate-limiting step for aluminum-implanted samples. The enhancement of the oxidation resistance of NBD 200 by aluminum implantation is attributed to the retardation of the outward diffusion of Mg2+.

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DO - 10.1111/j.1151-2916.2002.tb00185.x

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AN - SCOPUS:0036544970

SN - 0002-7820

VL - 85

SP - 865

EP - 872

JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

IS - 4

ER -

Oxidation studies of aluminum-implanted NBD 200 silicon nitride

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