Abstract
Silicon oxynitride (Si2N2O) ceramics were oxidized in 1 atm dry oxygen at 1100 °C and 1300 °C. The oxidized samples were studied using x-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy in conjunction with energy dispersive x-ray analysis. TEM characterization revealed the chemical abruptness of the SiO2 and Si2N2O interface. Further investigation indicated the inclusions of residual SiO2 in Si2N2O, which contributed to the broad XPS elemental distribution in the oxide-substrate interface region.
Original language | English |
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Pages (from-to) | 393-398 |
Number of pages | 6 |
Journal | Materials Research Society Symposium Proceedings |
Volume | 410 |
State | Published - 1996 |
Event | Proceedings of the 1995 Fall MRS Symposium - Boston, MA, USA Duration: 27 Nov 1995 → 30 Nov 1995 |