p-type doping of SiC by aluminum implantation for advanced device applications

Maria A. Caleca, Honghua Du, Joseph R. Flemish, Stephen P. Withrow

Research output: Contribution to journalConference articlepeer-review

Abstract

6H-SiC epitaxial layers with a background n-type dopant concentration of 1×1016/cm3 were hot implanted to doses ranging from 4.0×1013 to 1.8×1014 Al ions/cm2 at 65, 135, and 220 keV to achieve a box-type implant distribution to a depth of 300 nm. Electrical activation of dopants was carried out using a proximity annealing method at 1500 °C in a buffer environment to retard surface degradation of the SiC samples. Measurements using atomic force microscopy illustrated the morphological stability of the SiC surface during the high-temperature annealing. Transmission line measurements showed some degree of dopant activation. Characterization of fabricated p-n junction diodes demonstrated p-type conduction in the aluminum-implanted SiC samples.

Original languageEnglish
Pages (from-to)63-68
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume410
StatePublished - 1996
EventProceedings of the 1995 Fall MRS Symposium - Boston, MA, USA
Duration: 27 Nov 199530 Nov 1995

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