TY - JOUR
T1 - p-type doping of SiC by aluminum implantation for advanced device applications
AU - Caleca, Maria A.
AU - Du, Honghua
AU - Flemish, Joseph R.
AU - Withrow, Stephen P.
PY - 1996
Y1 - 1996
N2 - 6H-SiC epitaxial layers with a background n-type dopant concentration of 1×1016/cm3 were hot implanted to doses ranging from 4.0×1013 to 1.8×1014 Al ions/cm2 at 65, 135, and 220 keV to achieve a box-type implant distribution to a depth of 300 nm. Electrical activation of dopants was carried out using a proximity annealing method at 1500 °C in a buffer environment to retard surface degradation of the SiC samples. Measurements using atomic force microscopy illustrated the morphological stability of the SiC surface during the high-temperature annealing. Transmission line measurements showed some degree of dopant activation. Characterization of fabricated p-n junction diodes demonstrated p-type conduction in the aluminum-implanted SiC samples.
AB - 6H-SiC epitaxial layers with a background n-type dopant concentration of 1×1016/cm3 were hot implanted to doses ranging from 4.0×1013 to 1.8×1014 Al ions/cm2 at 65, 135, and 220 keV to achieve a box-type implant distribution to a depth of 300 nm. Electrical activation of dopants was carried out using a proximity annealing method at 1500 °C in a buffer environment to retard surface degradation of the SiC samples. Measurements using atomic force microscopy illustrated the morphological stability of the SiC surface during the high-temperature annealing. Transmission line measurements showed some degree of dopant activation. Characterization of fabricated p-n junction diodes demonstrated p-type conduction in the aluminum-implanted SiC samples.
UR - http://www.scopus.com/inward/record.url?scp=0029708110&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0029708110&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:0029708110
SN - 0272-9172
VL - 410
SP - 63
EP - 68
JO - Materials Research Society Symposium Proceedings
JF - Materials Research Society Symposium Proceedings
T2 - Proceedings of the 1995 Fall MRS Symposium
Y2 - 27 November 1995 through 30 November 1995
ER -