Abstract
The laser-induced photoelectrochemical etching of n-InP using a thin-film cell has been studied. A minimum in the reaction time was found as a function of etchant concentration for a given laser intensity. External potential biasing enhanced the reaction only for relatively low etchant concentrations.
| Original language | English |
|---|---|
| Pages (from-to) | 2655-2657 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 55 |
| Issue number | 25 |
| DOIs | |
| State | Published - 1989 |