Photonic crystal quantum-dot laser with ultra-low threshold

S. Strauf, K. Hennessy, M. T. Rakher, A. Badolato, P. M. Petroff, E. L. Hu, D. Bouwmeester

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We have fabricated L3-type photonic crystal microcavities with embedded InAs/GaAs quantum dots as active material. Single mode lasing has been found for devices emitting between 910-975 nm showing ultra-low lasing thresholds down to 160 nanoWatt.

Original languageEnglish
Title of host publication2005 Quantum Electronics and Laser Science Conference (QELS)
Pages404-406
Number of pages3
StatePublished - 2005
Event2005 Quantum Electronics and Laser Science Conference (QELS) - Baltimore, MD, United States
Duration: 22 May 200527 May 2005

Publication series

NameQuantum Electronics and Laser Science Conference (QELS)
Volume1

Conference

Conference2005 Quantum Electronics and Laser Science Conference (QELS)
Country/TerritoryUnited States
CityBaltimore, MD
Period22/05/0527/05/05

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