Photonic crystal quantum-dot laser with ultra-low threshold

S. Strauf, K. Hennessy, M. T. Rakher, A. Badolato, P. M. Petroff, E. L. Hu, D. Bouwmeester

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We have fabricated L3-type photonic crystal microcavities with embedded InAs/GaAs quantum dots as active material. Single mode lasing has been found for devices emitting between 910-975 nm showing ultra-low lasing thresholds down to 160 nanoWatt.

Original languageEnglish
Title of host publicationQuantum Electronics and Laser Science Conference, QELS 2005
StatePublished - 2005
EventQuantum Electronics and Laser Science Conference, QELS 2005 - Baltimore, MD, United States
Duration: 22 May 200522 May 2005

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceQuantum Electronics and Laser Science Conference, QELS 2005
Country/TerritoryUnited States
CityBaltimore, MD
Period22/05/0522/05/05

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