Photonic crystal quantum-dot laser with ultra-low threshold

S. Strauf; K. Hennessy; M. T. Rakher; A. Badolato; P. M. Petroff; E. L. Hu; D. Bouwmeester

Photonic crystal quantum-dot laser with ultra-low threshold

S. Strauf
, K. Hennessy
, M. T. Rakher
, A. Badolato
, P. M. Petroff
, E. L. Hu
, D. Bouwmeester

Department of Physics

University of California at Santa Barbara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

We have fabricated L3-type photonic crystal microcavities with embedded InAs/GaAs quantum dots as active material. Single mode lasing has been found for devices emitting between 910-975 nm showing ultra-low lasing thresholds down to 160 nanoWatt.

Original language	English
Title of host publication	2005 Quantum Electronics and Laser Science Conference (QELS)
Pages	404-406
Number of pages	3
State	Published - 2005
Event	2005 Quantum Electronics and Laser Science Conference (QELS) - Baltimore, MD, United States Duration: 22 May 2005 → 27 May 2005

Publication series

Name	Quantum Electronics and Laser Science Conference (QELS)
Volume	1

Conference

Conference	2005 Quantum Electronics and Laser Science Conference (QELS)
Country/Territory	United States
City	Baltimore, MD
Period	22/05/05 → 27/05/05

Cite this

@inproceedings{6720fd5a6de64acba8b2eb21e3600d65,

title = "Photonic crystal quantum-dot laser with ultra-low threshold",

abstract = "We have fabricated L3-type photonic crystal microcavities with embedded InAs/GaAs quantum dots as active material. Single mode lasing has been found for devices emitting between 910-975 nm showing ultra-low lasing thresholds down to 160 nanoWatt.",

author = "S. Strauf and K. Hennessy and Rakher, \{M. T.\} and A. Badolato and Petroff, \{P. M.\} and Hu, \{E. L.\} and D. Bouwmeester",

year = "2005",

language = "English",

isbn = "1557527962",

series = "Quantum Electronics and Laser Science Conference (QELS)",

pages = "404--406",

booktitle = "2005 Quantum Electronics and Laser Science Conference (QELS)",

note = "2005 Quantum Electronics and Laser Science Conference (QELS) ; Conference date: 22-05-2005 Through 27-05-2005",

}

Strauf, S, Hennessy, K, Rakher, MT, Badolato, A, Petroff, PM, Hu, EL & Bouwmeester, D 2005, Photonic crystal quantum-dot laser with ultra-low threshold. in 2005 Quantum Electronics and Laser Science Conference (QELS)., QWA1, Quantum Electronics and Laser Science Conference (QELS), vol. 1, pp. 404-406, 2005 Quantum Electronics and Laser Science Conference (QELS), Baltimore, MD, United States, 22/05/05.

TY - GEN

T1 - Photonic crystal quantum-dot laser with ultra-low threshold

AU - Strauf, S.

AU - Hennessy, K.

AU - Rakher, M. T.

AU - Badolato, A.

AU - Petroff, P. M.

AU - Hu, E. L.

AU - Bouwmeester, D.

PY - 2005

Y1 - 2005

N2 - We have fabricated L3-type photonic crystal microcavities with embedded InAs/GaAs quantum dots as active material. Single mode lasing has been found for devices emitting between 910-975 nm showing ultra-low lasing thresholds down to 160 nanoWatt.

AB - We have fabricated L3-type photonic crystal microcavities with embedded InAs/GaAs quantum dots as active material. Single mode lasing has been found for devices emitting between 910-975 nm showing ultra-low lasing thresholds down to 160 nanoWatt.

UR - https://www.scopus.com/pages/publications/27144486932

UR - https://www.scopus.com/pages/publications/27144486932#tab=citedBy

M3 - Conference contribution

AN - SCOPUS:27144486932

SN - 1557527962

T3 - Quantum Electronics and Laser Science Conference (QELS)

SP - 404

EP - 406

BT - 2005 Quantum Electronics and Laser Science Conference (QELS)

T2 - 2005 Quantum Electronics and Laser Science Conference (QELS)

Y2 - 22 May 2005 through 27 May 2005

ER -

Photonic crystal quantum-dot laser with ultra-low threshold

Abstract

Publication series

Conference

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