TY - JOUR
T1 - Photoswitchable optoelectronic properties of 2D MoSe2/diarylethene hybrid structures
AU - Park, Sewon
AU - Ji, Jaehoon
AU - Cunningham, Connor
AU - Pillai, Srajan
AU - Rouillon, Jean
AU - Benitez-Martin, Carlos
AU - Fang, Mengqi
AU - Yang, Eui Hyeok
AU - Andréasson, Joakim
AU - You, Jeong Ho
AU - Choi, Jong Hyun
N1 - Publisher Copyright:
© The Author(s) 2024.
PY - 2024/12
Y1 - 2024/12
N2 - The ability to modulate optical and electrical properties of two-dimensional (2D) semiconductors has sparked considerable interest in transition metal dichalcogenides (TMDs). Herein, we introduce a facile strategy for modulating optoelectronic properties of monolayer MoSe2 with external light. Photochromic diarylethene (DAE) molecules formed a 2-nm-thick uniform layer on MoSe2, switching between its closed- and open-form isomers under UV and visible irradiation, respectively. We have discovered that the closed DAE conformation under UV has its lowest unoccupied molecular orbital energy level lower than the conduction band minimum of MoSe2, which facilitates photoinduced charge separation at the hybrid interface and quenches photoluminescence (PL) from monolayer flakes. In contrast, open isomers under visible light prevent photoexcited electron transfer from MoSe2 to DAE, thus retaining PL emission properties. Alternating UV and visible light repeatedly show a dynamic modulation of optoelectronic signatures of MoSe2. Conductive atomic force microscopy and Kelvin probe force microscopy also reveal an increase in conductivity and work function of MoSe2/DAE with photoswitched closed-form DAE. These results may open new opportunities for designing new phototransistors and other 2D optoelectronic devices.
AB - The ability to modulate optical and electrical properties of two-dimensional (2D) semiconductors has sparked considerable interest in transition metal dichalcogenides (TMDs). Herein, we introduce a facile strategy for modulating optoelectronic properties of monolayer MoSe2 with external light. Photochromic diarylethene (DAE) molecules formed a 2-nm-thick uniform layer on MoSe2, switching between its closed- and open-form isomers under UV and visible irradiation, respectively. We have discovered that the closed DAE conformation under UV has its lowest unoccupied molecular orbital energy level lower than the conduction band minimum of MoSe2, which facilitates photoinduced charge separation at the hybrid interface and quenches photoluminescence (PL) from monolayer flakes. In contrast, open isomers under visible light prevent photoexcited electron transfer from MoSe2 to DAE, thus retaining PL emission properties. Alternating UV and visible light repeatedly show a dynamic modulation of optoelectronic signatures of MoSe2. Conductive atomic force microscopy and Kelvin probe force microscopy also reveal an increase in conductivity and work function of MoSe2/DAE with photoswitched closed-form DAE. These results may open new opportunities for designing new phototransistors and other 2D optoelectronic devices.
KW - Diarylethene
KW - MoSe
KW - Optoelectronics
KW - Photochromic molecules
KW - Photoswitch
KW - Transition metal dichalcogenide
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UR - http://www.scopus.com/inward/citedby.url?scp=85188881847&partnerID=8YFLogxK
U2 - 10.1038/s41598-024-57479-z
DO - 10.1038/s41598-024-57479-z
M3 - Article
C2 - 38538740
AN - SCOPUS:85188881847
VL - 14
JO - Scientific Reports
JF - Scientific Reports
IS - 1
M1 - 7325
ER -