TY - JOUR
T1 - Preparation of M0s2 thin films by chemical vapor deposition
AU - Lee, Woo Y.
AU - Besmann, Theodore M.
AU - Stott, Michael W.
PY - 1994/6
Y1 - 1994/6
N2 - The chemical vapor deposition (CVD) of MoS2 by reaction of H2S with molybdenum halides was determined to be thermodynamically favored over a wide range of temperature, pressure, and precursor concentration conditions as long as excess H2S was available. The thermochemical stability of H2S, MoF6, and M0ci5 was also assessed to address their suitability as precursors for the CVD of MoS2. The results from the thermodynamic analysis were used as guidance in the deposition of MoS2 thin films from MoF6 and H2S. The (002) basal planes of MoS2 films deposited above 700 K were preferentially oriented perpendicular to the substrate surface.
AB - The chemical vapor deposition (CVD) of MoS2 by reaction of H2S with molybdenum halides was determined to be thermodynamically favored over a wide range of temperature, pressure, and precursor concentration conditions as long as excess H2S was available. The thermochemical stability of H2S, MoF6, and M0ci5 was also assessed to address their suitability as precursors for the CVD of MoS2. The results from the thermodynamic analysis were used as guidance in the deposition of MoS2 thin films from MoF6 and H2S. The (002) basal planes of MoS2 films deposited above 700 K were preferentially oriented perpendicular to the substrate surface.
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U2 - 10.1557/JMR.1994.1474
DO - 10.1557/JMR.1994.1474
M3 - Article
AN - SCOPUS:0028452752
SN - 0884-2914
VL - 9
SP - 1474
EP - 1483
JO - Journal of Materials Research
JF - Journal of Materials Research
IS - 6
ER -