Preparation of M0s2 thin films by chemical vapor deposition

Woo Y. Lee, Theodore M. Besmann, Michael W. Stott

Research output: Contribution to journalArticlepeer-review

54 Scopus citations

Abstract

The chemical vapor deposition (CVD) of MoS2 by reaction of H2S with molybdenum halides was determined to be thermodynamically favored over a wide range of temperature, pressure, and precursor concentration conditions as long as excess H2S was available. The thermochemical stability of H2S, MoF6, and M0ci5 was also assessed to address their suitability as precursors for the CVD of MoS2. The results from the thermodynamic analysis were used as guidance in the deposition of MoS2 thin films from MoF6 and H2S. The (002) basal planes of MoS2 films deposited above 700 K were preferentially oriented perpendicular to the substrate surface.

Original languageEnglish
Pages (from-to)1474-1483
Number of pages10
JournalJournal of Materials Research
Volume9
Issue number6
DOIs
StatePublished - Jun 1994

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