Process-induced residual stresses in a glob top encapsulated silicon chip

Russell R. Shepherd, Jianmin Qu, Tien Y. Wu

Research output: Contribution to conferencePaperpeer-review

6 Scopus citations

Abstract

The process-induced thermal stress field in a glob top encapsulated single chip module was studied. The effects of the size of the package, the presence of delamination, and the contact angle of the glob top encapsulant were investigated, and the effects of these parameters on the interfacial stresses were determined. The energy release rate and stress intensity factors at the crack tip were obtained through finite element method. Results showed that the encapsulant should be dispensed all the way to the edge of the chip to minimize the driving force for initiating delamination cracks. An interface with a higher resistance to mode I fracture is also desirable to prevent interface delamination.

Original languageEnglish
Pages123-131
Number of pages9
StatePublished - 1995
EventProceedings of the 1995 ASME International Mechanical Engineering Congress and Exposition - San Francisco, CA, USA
Duration: 12 Nov 199517 Nov 1995

Conference

ConferenceProceedings of the 1995 ASME International Mechanical Engineering Congress and Exposition
CitySan Francisco, CA, USA
Period12/11/9517/11/95

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