Proximity-induced antisymmetric humps in Hall resistivity in Fe-doped monolayer WSe2

  • Mengqi Fang
  • , Chunli Tang
  • , Siwei Chen
  • , Zitao Tang
  • , Min Yeong Choi
  • , Jae Hyuck Jang
  • , Hee Suk Chung
  • , Maya Narayanan Nair
  • , Wencan Jin
  • , Eui Hyeok Yang

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Non-collinear spin texture has attracted great attention since it provides an important probe of the interaction between electron and topological spin textures. While it has been widely reported in chiral magnets, oxide heterostructures, and hybrid systems such as ferromagnet/heavy metal and ferromagnet/topological insulators, the study of non-collinear spin texture in two-dimensional (2D) van der Waals (vdW) dilute magnetic semiconductor (DMS) monolayers is relatively lacking, hindering the understanding at the atomically thin scale. Here, we probe the temperature-dependent antisymmetric humps in Hall resistivity by utilizing the proximity coupling of Fe-doped monolayer WSe2 (Fe:WSe2) synthesized using chemical vapor deposition on a Pt Hall bar. Multiple characterization methods were employed to demonstrate that Fe atoms substitutionally replace W atoms, making a 2D vdW DMS at room temperature. Distinct from the intrinsic anomalous Hall effect, we found the transverse Hall resistivity of Fe:WSe2 displaying two additional antisymmetric peak features in the temperature-dependent measurements. These peaks are attributed to the magnetic features at the Fe:WSe2 and Pt interface. Our work shows that a DMS synthesized from 2D vdW transition metal dichalcogenides is promising for realizing magnetic and spintronic applications.

Original languageEnglish
Article number103101
JournalApplied Physics Letters
Volume126
Issue number10
DOIs
StatePublished - 1 Mar 2025

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