Quantum optical studies on individual acceptor bound excitons in a semiconductor

S. Strauf; P. Michler; M. Klude; D. Hommel; G. Bacher; A. Forchel

doi:10.1103/PhysRevLett.89.177403

Quantum optical studies on individual acceptor bound excitons in a semiconductor

S. Strauf, P. Michler, M. Klude, D. Hommel, G. Bacher, A. Forchel

Department of Physics

Research output: Contribution to journal › Article › peer-review

99 Scopus citations

Abstract

The photon emission of nitrogen atoms embedded in mesa etched ZnSe:N quantum well structures was studied by spatially resolved μ-PL and by photon correlation measurements. The μ-PL spectra showed several spectrally sharp lines due to bound-excitation transitions at individual nitrogen atoms. In addition, triggered single-photon emission was verified under pulsed optical excitation with a decrease in multiphoton emission up to a factor of 5 as compared to a Poisson light source.

Original language	English
Article number	177403
Pages (from-to)	177403/1-177403/4
Journal	Physical Review Letters
Volume	89
Issue number	17
DOIs	https://doi.org/10.1103/PhysRevLett.89.177403
State	Published - 21 Oct 2002

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10.1103/PhysRevLett.89.177403

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title = "Quantum optical studies on individual acceptor bound excitons in a semiconductor",

abstract = "The photon emission of nitrogen atoms embedded in mesa etched ZnSe:N quantum well structures was studied by spatially resolved μ-PL and by photon correlation measurements. The μ-PL spectra showed several spectrally sharp lines due to bound-excitation transitions at individual nitrogen atoms. In addition, triggered single-photon emission was verified under pulsed optical excitation with a decrease in multiphoton emission up to a factor of 5 as compared to a Poisson light source.",

author = "S. Strauf and P. Michler and M. Klude and D. Hommel and G. Bacher and A. Forchel",

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AU - Strauf, S.

AU - Michler, P.

AU - Klude, M.

AU - Hommel, D.

AU - Bacher, G.

AU - Forchel, A.

PY - 2002/10/21

Y1 - 2002/10/21

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AB - The photon emission of nitrogen atoms embedded in mesa etched ZnSe:N quantum well structures was studied by spatially resolved μ-PL and by photon correlation measurements. The μ-PL spectra showed several spectrally sharp lines due to bound-excitation transitions at individual nitrogen atoms. In addition, triggered single-photon emission was verified under pulsed optical excitation with a decrease in multiphoton emission up to a factor of 5 as compared to a Poisson light source.

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Quantum optical studies on individual acceptor bound excitons in a semiconductor

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