TY - JOUR
T1 - Shallow donors in ultrathin nitrogen-doped ZnSe layers - a novel or a disregarded compensation mechanism in II-VI device structures?
AU - Strauf, S.
AU - Michler, P.
AU - Gutowski, J.
AU - Klude, M.
AU - Hommel, D.
PY - 2000/6/2
Y1 - 2000/6/2
N2 - In the last decade, a manifold of studies has been conducted to elucidate the compensation mechanism in strain relaxed N-doped ZnSe layers of about 1 μm or more thickness. It has mostly been disregarded, however, that in optoelectronic devices often N-doped layers thinner than the critical thickness are used. We have investigated the donor-acceptor-pair (DAP) recombination in N-doped MBE-grown ZnSe layers being as thin as 100, 20, 10, and 5 nm embedded in undoped ZnMgSSe barriers lattice matched to the GaAs substrates. The temperature and intensity dependence of the DAP recombination as well as the observation of two-hole transitions of the nitrogen acceptor on the Se site leads us to the conclusion that a not-yet investigated very shallow donor is involved in the DAP recombination. This impurity with a thermal activation energy of 19 ± 1 meV seems to be the dominant compensating donor in ultrathin fully-strained N-doped ZnSe, at least if embedded in quaternary barriers.
AB - In the last decade, a manifold of studies has been conducted to elucidate the compensation mechanism in strain relaxed N-doped ZnSe layers of about 1 μm or more thickness. It has mostly been disregarded, however, that in optoelectronic devices often N-doped layers thinner than the critical thickness are used. We have investigated the donor-acceptor-pair (DAP) recombination in N-doped MBE-grown ZnSe layers being as thin as 100, 20, 10, and 5 nm embedded in undoped ZnMgSSe barriers lattice matched to the GaAs substrates. The temperature and intensity dependence of the DAP recombination as well as the observation of two-hole transitions of the nitrogen acceptor on the Se site leads us to the conclusion that a not-yet investigated very shallow donor is involved in the DAP recombination. This impurity with a thermal activation energy of 19 ± 1 meV seems to be the dominant compensating donor in ultrathin fully-strained N-doped ZnSe, at least if embedded in quaternary barriers.
UR - http://www.scopus.com/inward/record.url?scp=0033689648&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033689648&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(00)00138-X
DO - 10.1016/S0022-0248(00)00138-X
M3 - Conference article
AN - SCOPUS:0033689648
SN - 0022-0248
VL - 214
SP - 497
EP - 501
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
T2 - The 9th International Conference on II-VI Compounds
Y2 - 1 November 1999 through 5 November 1999
ER -