Sol-gel processing of low dielectric constant nanoporous silica thin films

Deok Yang Kim, Henry Du, Suhas Bhandarkar, David W. Johnson

Research output: Contribution to journalConference articlepeer-review

9 Scopus citations

Abstract

Tetramethyl ammonium silicate (TMAS) is known as a structuring agent in zeolite synthesis. We report its first use to prepare porous silica films for low k dielectric applications in microelectronics. A solution of TMAS 18.7 wt.% was spin coated on silica substrates with a 3000 Å thick thermal oxide. The spin coated films were subsequently heat-treated at 450°C to obtain porous silica. The use of TMAS solution without gelation led to films of only moderate porosity value of 10%. The addition of methyl lactate, a gelling agent, significantly increased film porosity and improved the pore size distribution. For example, 50% porosity and uniform pore size distribution (average pore size ∼ 40 Å) has been achieved. Dielectric constants (k) of our porous films are as low as 2.5.

Original languageEnglish
Pages (from-to)147-152
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume703
StatePublished - 2002
EventNanophase and Nanocomposite Materials IV - Boston, MA, United States
Duration: 26 Nov 200129 Nov 2001

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