Solid-state power switches for HPM modulators

L. E. Kingsley, R. Pastore, H. Singh, G. Ayres, R. Burdalski, J. F. Agee

Research output: Contribution to conferencePaperpeer-review

4 Scopus citations

Abstract

Power modulators for pulsed microwave applications, generally utilizing a thyratron-switched PFN, typically produce 50-120 kV, 1-2 kA microsecond timescale pulses with sub-microsecond (approximately 100-200 nsec) risetimes. This paper will review an investigation into the feasibility of utilizing certain solid-state power switches at the relatively fast speeds required for HPM modulators. Two very different thyristor switches, an ABB HCT and an n-type MCT, were investigated in a fast (approximately 136 nsec), low-impedance 1.4-μsec PFN. Limited success was obtained, as both switches demonstrated sub-microsecond switching times. The ABB HCT switched a bias of 3840 V with a risetime of 524 nsec. The N-MCT was faster, switching a bias of 944 V in 220 nsec. These results indicate that thyristor switches may be fast enough for some HPM modulator applications.

Original languageEnglish
Pages65-70
Number of pages6
StatePublished - 1995
EventProceedings of the 1995 10th IEEE International Pulsed Power Conference. Part 1 (of 2) - Albuquerque, NM, USA
Duration: 3 Jul 19956 Jul 1995

Conference

ConferenceProceedings of the 1995 10th IEEE International Pulsed Power Conference. Part 1 (of 2)
CityAlbuquerque, NM, USA
Period3/07/956/07/95

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