Abstract
Power modulators for pulsed microwave applications, generally utilizing a thyratron-switched PFN, typically produce 50-120 kV, 1-2 kA microsecond timescale pulses with sub-microsecond (approximately 100-200 nsec) risetimes. This paper will review an investigation into the feasibility of utilizing certain solid-state power switches at the relatively fast speeds required for HPM modulators. Two very different thyristor switches, an ABB HCT and an n-type MCT, were investigated in a fast (approximately 136 nsec), low-impedance 1.4-μsec PFN. Limited success was obtained, as both switches demonstrated sub-microsecond switching times. The ABB HCT switched a bias of 3840 V with a risetime of 524 nsec. The N-MCT was faster, switching a bias of 944 V in 220 nsec. These results indicate that thyristor switches may be fast enough for some HPM modulator applications.
| Original language | English |
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| Pages | 65-70 |
| Number of pages | 6 |
| State | Published - 1995 |
| Event | Proceedings of the 1995 10th IEEE International Pulsed Power Conference. Part 1 (of 2) - Albuquerque, NM, USA Duration: 3 Jul 1995 → 6 Jul 1995 |
Conference
| Conference | Proceedings of the 1995 10th IEEE International Pulsed Power Conference. Part 1 (of 2) |
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| City | Albuquerque, NM, USA |
| Period | 3/07/95 → 6/07/95 |