Studies on carbon as alternative p-type dopant for gallium nitride

U. Birkle, M. Fehrer, V. Kirchner, S. Einfeldt, D. Hommel, S. Strauf, P. Michler, J. Gutowski

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6 Scopus citations

Abstract

GaN layers were grown by molecular beam epitaxy and doped with carbon of nominal concentrations ranging from 1016 cm-3 to 10 20 cm-3. The incorporation of carbon leads to a reduction of the background electron concentration by one order of magnitude but the material remains n-type. For high carbon concentrations a re-increase of the carrier concentration is observed which is related to selfcompensation. Investigations of the donor-acceptor-pair luminescence show that doping with carbon is accompanied by the generation of a new donor exhibiting a thermal activation energy of about 55 meV. Layers grown by atomic layer epitaxy are marked by an increased intensity of the donor-acceptor-pair band luminescence which is attributed to the enforced incorporation of carbon onto the nitrogen sublattice. The yellow luminescence is found to be a typical feature of all carbon doped layers in contrast to nominally undoped samples.

Original languageEnglish
Pages (from-to)6d
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume4
Issue numberSUPPL. 1
DOIs
StatePublished - 1999

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