Abstract
GaN layers were grown by molecular beam epitaxy and doped with carbon of nominal concentrations ranging from 1016 cm-3 to 10 20 cm-3. The incorporation of carbon leads to a reduction of the background electron concentration by one order of magnitude but the material remains n-type. For high carbon concentrations a re-increase of the carrier concentration is observed which is related to selfcompensation. Investigations of the donor-acceptor-pair luminescence show that doping with carbon is accompanied by the generation of a new donor exhibiting a thermal activation energy of about 55 meV. Layers grown by atomic layer epitaxy are marked by an increased intensity of the donor-acceptor-pair band luminescence which is attributed to the enforced incorporation of carbon onto the nitrogen sublattice. The yellow luminescence is found to be a typical feature of all carbon doped layers in contrast to nominally undoped samples.
Original language | English |
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Pages (from-to) | 6d |
Journal | MRS Internet Journal of Nitride Semiconductor Research |
Volume | 4 |
Issue number | SUPPL. 1 |
DOIs | |
State | Published - 1999 |