Abstract
GaN layers were grown by molecular beam epitaxy and doped with carbon of nominal concentrations ranging from 1016 cm-3 to 1020 cm-3. The incorporation of carbon leads to a reduction of the background electron concentration by one order of magnitude but the material remains n-type. For high carbon concentrations a re-increase of the carrier concentration is observed which is related to selfcompensation. Investigations of the donor-acceptor-pair luminescence show that doping with carbon is accompanied by the generation of a new donor exhibiting a thermal activation energy of about 55 meV. Layers grown by atomic layer epitaxy are marked by an increased intensity of the donor-acceptor-pair band luminescence which is attributed to the enforced incorporation of carbon onto the nitrogen sublattice. The yellow luminescence is found to be a typical feature of all carbon doped layers in contrast to nominally undoped samples.
Original language | English |
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Pages (from-to) | G5.6 |
Journal | Materials Research Society Symposium Proceedings |
Volume | 537 |
State | Published - 1999 |
Event | Proceedings of the 1998 MRS Fall Meeting - Symposium on 'GaN and Related Alloys' - Boston, MA, USA Duration: 30 Nov 1998 → 4 Dec 1998 |