The cyclic and continuous oxidation of Si3N4 with and without aluminum implantation

Jianqing Wu; Yingjun Wang; Jiandong Ye; Henry H. Du

The cyclic and continuous oxidation of Si₃N₄ with and without aluminum implantation

Jianqing Wu, Yingjun Wang, Jiandong Ye, Henry H. Du

South China University of Technology

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

The cyclic and continuous oxidation behaviors of a HIP Si₃N₄ were investigated at the temperatures 1100°C and 900°C. The Si₃N₄ shows the same oxidation resistance in both cyclic and continuous oxidations, the oxide layer is not protective against oxidation in nature. The oxidation rate-controlling step is the outward diffusion of the cations from substrate to oxide. Al implantation can perfect the structure of oxide scale to improve the oxidation resistance of this Si₃N₄ at the lower temperature, and change the oxidation rate-controlling step to the diffusion through the oxide scale.

Original language	English
Pages (from-to)	803-806
Number of pages	4
Journal	Key Engineering Materials
Volume	224-226
State	Published - 2002
Event	Proceedings of the Second China International Conference on High-Performance Ceramics (CICC-2) - Kunming, China Duration: 11 Nov 2001 → 15 Nov 2001

Keywords

Ion implantation
Oxidation
Silicon nitride
Thermal cycle

Cite this

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title = "The cyclic and continuous oxidation of Si3N4 with and without aluminum implantation",

abstract = "The cyclic and continuous oxidation behaviors of a HIP Si3N4 were investigated at the temperatures 1100°C and 900°C. The Si3N4 shows the same oxidation resistance in both cyclic and continuous oxidations, the oxide layer is not protective against oxidation in nature. The oxidation rate-controlling step is the outward diffusion of the cations from substrate to oxide. Al implantation can perfect the structure of oxide scale to improve the oxidation resistance of this Si3N4 at the lower temperature, and change the oxidation rate-controlling step to the diffusion through the oxide scale.",

keywords = "Ion implantation, Oxidation, Silicon nitride, Thermal cycle",

author = "Jianqing Wu and Yingjun Wang and Jiandong Ye and Du, {Henry H.}",

year = "2002",

language = "English",

volume = "224-226",

pages = "803--806",

note = "Proceedings of the Second China International Conference on High-Performance Ceramics (CICC-2) ; Conference date: 11-11-2001 Through 15-11-2001",

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TY - JOUR

T1 - The cyclic and continuous oxidation of Si3N4 with and without aluminum implantation

AU - Wu, Jianqing

AU - Wang, Yingjun

AU - Ye, Jiandong

AU - Du, Henry H.

PY - 2002

Y1 - 2002

N2 - The cyclic and continuous oxidation behaviors of a HIP Si3N4 were investigated at the temperatures 1100°C and 900°C. The Si3N4 shows the same oxidation resistance in both cyclic and continuous oxidations, the oxide layer is not protective against oxidation in nature. The oxidation rate-controlling step is the outward diffusion of the cations from substrate to oxide. Al implantation can perfect the structure of oxide scale to improve the oxidation resistance of this Si3N4 at the lower temperature, and change the oxidation rate-controlling step to the diffusion through the oxide scale.

AB - The cyclic and continuous oxidation behaviors of a HIP Si3N4 were investigated at the temperatures 1100°C and 900°C. The Si3N4 shows the same oxidation resistance in both cyclic and continuous oxidations, the oxide layer is not protective against oxidation in nature. The oxidation rate-controlling step is the outward diffusion of the cations from substrate to oxide. Al implantation can perfect the structure of oxide scale to improve the oxidation resistance of this Si3N4 at the lower temperature, and change the oxidation rate-controlling step to the diffusion through the oxide scale.

KW - Ion implantation

KW - Oxidation

KW - Silicon nitride

KW - Thermal cycle

UR - http://www.scopus.com/inward/record.url?scp=0036431894&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036431894&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036431894

SN - 1013-9826

VL - 224-226

SP - 803

EP - 806

JO - Key Engineering Materials

JF - Key Engineering Materials

T2 - Proceedings of the Second China International Conference on High-Performance Ceramics (CICC-2)

Y2 - 11 November 2001 through 15 November 2001

ER -

The cyclic and continuous oxidation of Si₃N₄ with and without aluminum implantation

Abstract

Keywords

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