The effect of thermal annealing processes on graphene

K. Kumar, Y. S. Kim, Y. Tian, X. Li, A. Pallikaras, E. H. Yang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We present an in-depth investigation of the consequence of gas and vacuum annealing utilized to remove polymer (PMMA) residues on the electronic doping, strain, and morphology of chemical vapor deposition grown graphene. We demonstrate that annealing under gas or vacuum increases doping levels in graphene as residual PMMA is burned off, interfacial water is evaporated, and graphene conformally contacts the substrate. This is corroborated by AFM measurements, indicating a need for further research on graphene transfer or growth methods where substrate-induced doping is minimized. These results are significant for determining the extent of PMMA influence on graphene during the transfer process and/or device fabrication.

Original languageEnglish
Title of host publicationTechnical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Pages245-248
Number of pages4
StatePublished - 2013
EventNanotechnology 2013: Advanced Materials, CNTs, Particles, Films and Composites - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 - Washington, DC, United States
Duration: 12 May 201316 May 2013

Publication series

NameTechnical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Volume1

Conference

ConferenceNanotechnology 2013: Advanced Materials, CNTs, Particles, Films and Composites - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Country/TerritoryUnited States
CityWashington, DC
Period12/05/1316/05/13

Keywords

  • Annealing
  • Atomic force microscopy
  • Chemical vapor deposition
  • Graphene
  • Raman spectroscopy

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