TY - JOUR
T1 - The effects of substitutional Fe-doping on magnetism in MoS2 and WS2 monolayers
AU - Kang, Kyungnam
AU - Fu, Shichen
AU - Shayan, Kamran
AU - Anthony, Yoshimura
AU - Dadras, Siamak
AU - Yuzan, Xiong
AU - Kazunori, Fujisawa
AU - Terrones, Mauricio
AU - Zhang, Wei
AU - Strauf, Stefan
AU - Meunier, Vincent
AU - Vamivakas, A. Nick
AU - Yang, Eui Hyeok
N1 - Publisher Copyright:
© 2020 IOP Publishing Ltd.
PY - 2020/12/10
Y1 - 2020/12/10
N2 - Doping of two-dimensional (2D) semiconductors has been intensively studied toward modulating their electrical, optical, and magnetic properties. While ferromagnetic 2D semiconductors hold promise for future spintronics and valleytronics, the origin of ferromagnetism in 2D materials remains unclear. Here, we show that substitutional Fe-doping of MoS2 andWS2 monolayers induce different magnetic properties. The Fe-doped monolayers are directly synthesized via chemical vapor deposition. In both cases, Fe substitutional doping is successfully achieved, as confirmed using scanning transmission electron microscopy. While both Fe:MoS2 and Fe:WS2 show PL quenching and n-type doping, Fe dopants in WS2 monolayers are found to assume deep-level trap states, in contrast to the case of Fe:MoS2, where the states are found to be shallow. Using μm- and mm-precision local NV- magnetometry and superconducting quantum interference device, we discover that, unlike MoS2 monolayers, WS2 monolayers do not show a magnetic phase transition to ferromagnetism upon Fe-doping. The absence of ferromagnetism in Fe:WS2 is corroborated using density functional theory calculations.
AB - Doping of two-dimensional (2D) semiconductors has been intensively studied toward modulating their electrical, optical, and magnetic properties. While ferromagnetic 2D semiconductors hold promise for future spintronics and valleytronics, the origin of ferromagnetism in 2D materials remains unclear. Here, we show that substitutional Fe-doping of MoS2 andWS2 monolayers induce different magnetic properties. The Fe-doped monolayers are directly synthesized via chemical vapor deposition. In both cases, Fe substitutional doping is successfully achieved, as confirmed using scanning transmission electron microscopy. While both Fe:MoS2 and Fe:WS2 show PL quenching and n-type doping, Fe dopants in WS2 monolayers are found to assume deep-level trap states, in contrast to the case of Fe:MoS2, where the states are found to be shallow. Using μm- and mm-precision local NV- magnetometry and superconducting quantum interference device, we discover that, unlike MoS2 monolayers, WS2 monolayers do not show a magnetic phase transition to ferromagnetism upon Fe-doping. The absence of ferromagnetism in Fe:WS2 is corroborated using density functional theory calculations.
KW - Chemical vapor deposition
KW - Dilute magnetic semiconductor
KW - Ferromagnetism
KW - N-type doping
KW - Substitutional doping
KW - Trap states
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U2 - 10.1088/1361-6528/abcd61
DO - 10.1088/1361-6528/abcd61
M3 - Article
C2 - 33232946
AN - SCOPUS:85099225139
SN - 0957-4484
VL - 32
JO - Nanotechnology
JF - Nanotechnology
IS - 9
M1 - 095708
ER -