The measurement of stress during the deposition of thin films

A. G. Read; J. P.G. Farr; K. G. Sheppard

doi:10.1016/0376-4583(79)90032-3

The measurement of stress during the deposition of thin films

A. G. Read, J. P.G. Farr, K. G. Sheppard

University of Birmingham

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The deflection of a small cantilever during the deposition of a surface layer on one side is conveniently and sensitively monitored by holographic interferometry. Stresses developing when silver was electroplated onto vapour-metallized semiconductor substrates have been measured using a sequence of lapsed-time holographic interferograms recorded on a single photographic plate. This multi-framing technique, involving screening of the reference beam, has some advantages compared with the real-time technique.

Original language	English
Pages (from-to)	325-331
Number of pages	7
Journal	Surface Technology
Volume	8
Issue number	4
DOIs	https://doi.org/10.1016/0376-4583(79)90032-3
State	Published - Apr 1979

Access to Document

10.1016/0376-4583(79)90032-3

Cite this

@article{959df00c5d52496fbb68fc4884514f04,

title = "The measurement of stress during the deposition of thin films",

abstract = "The deflection of a small cantilever during the deposition of a surface layer on one side is conveniently and sensitively monitored by holographic interferometry. Stresses developing when silver was electroplated onto vapour-metallized semiconductor substrates have been measured using a sequence of lapsed-time holographic interferograms recorded on a single photographic plate. This multi-framing technique, involving screening of the reference beam, has some advantages compared with the real-time technique.",

author = "Read, \{A. G.\} and Farr, \{J. P.G.\} and Sheppard, \{K. G.\}",

year = "1979",

month = apr,

doi = "10.1016/0376-4583(79)90032-3",

language = "English",

volume = "8",

pages = "325--331",

number = "4",

}

TY - JOUR

T1 - The measurement of stress during the deposition of thin films

AU - Read, A. G.

AU - Farr, J. P.G.

AU - Sheppard, K. G.

PY - 1979/4

Y1 - 1979/4

N2 - The deflection of a small cantilever during the deposition of a surface layer on one side is conveniently and sensitively monitored by holographic interferometry. Stresses developing when silver was electroplated onto vapour-metallized semiconductor substrates have been measured using a sequence of lapsed-time holographic interferograms recorded on a single photographic plate. This multi-framing technique, involving screening of the reference beam, has some advantages compared with the real-time technique.

AB - The deflection of a small cantilever during the deposition of a surface layer on one side is conveniently and sensitively monitored by holographic interferometry. Stresses developing when silver was electroplated onto vapour-metallized semiconductor substrates have been measured using a sequence of lapsed-time holographic interferograms recorded on a single photographic plate. This multi-framing technique, involving screening of the reference beam, has some advantages compared with the real-time technique.

UR - https://www.scopus.com/pages/publications/0018456528

UR - https://www.scopus.com/inward/citedby.url?scp=0018456528&partnerID=8YFLogxK

U2 - 10.1016/0376-4583(79)90032-3

DO - 10.1016/0376-4583(79)90032-3

M3 - Article

AN - SCOPUS:0018456528

SN - 0376-4583

VL - 8

SP - 325

EP - 331

JO - Surface Technology

JF - Surface Technology

IS - 4

ER -

The measurement of stress during the deposition of thin films

Abstract

Access to Document

Other files and links

Fingerprint

Cite this