The quantitative determination of the residual stress profile in oxidized p+ silicon films

Eui Hyeok Yang, Sang Sik Yang

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

This paper presents a quantitative method to determine the profile of the residual stress through the depth of a highly boron-doped silicon film. First, the stress profile relative to the stress at the neutral surface of the film is determined by least-square estimation using the measured vertical deflection of p+ silicon cantilevers with different etch depths. Secondly, the average of the residual stress is obtained from the measured deflection of a rotating beam structure. The stress profile is determined completely from these two determinations. Two examples for the application of this method illustrate that most of the p+ region is subjected to the tensile stress except the region near the front surface and that the stress gradient of the film oxidized at 1100 °C is steeper than that of the film oxidized at 1000 °C.

Original languageEnglish
Pages (from-to)684-689
Number of pages6
JournalSensors and Actuators, A: Physical
Volume54
Issue number1-3
DOIs
StatePublished - Jun 1996

Keywords

  • Cantilevers
  • P
  • Residual stress
  • Rotating beam structures
  • Silicon films

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