TY - JOUR
T1 - The quantitative determination of the residual stress profile in oxidized p+ silicon films
AU - Yang, Eui Hyeok
AU - Yang, Sang Sik
PY - 1996/6
Y1 - 1996/6
N2 - This paper presents a quantitative method to determine the profile of the residual stress through the depth of a highly boron-doped silicon film. First, the stress profile relative to the stress at the neutral surface of the film is determined by least-square estimation using the measured vertical deflection of p+ silicon cantilevers with different etch depths. Secondly, the average of the residual stress is obtained from the measured deflection of a rotating beam structure. The stress profile is determined completely from these two determinations. Two examples for the application of this method illustrate that most of the p+ region is subjected to the tensile stress except the region near the front surface and that the stress gradient of the film oxidized at 1100 °C is steeper than that of the film oxidized at 1000 °C.
AB - This paper presents a quantitative method to determine the profile of the residual stress through the depth of a highly boron-doped silicon film. First, the stress profile relative to the stress at the neutral surface of the film is determined by least-square estimation using the measured vertical deflection of p+ silicon cantilevers with different etch depths. Secondly, the average of the residual stress is obtained from the measured deflection of a rotating beam structure. The stress profile is determined completely from these two determinations. Two examples for the application of this method illustrate that most of the p+ region is subjected to the tensile stress except the region near the front surface and that the stress gradient of the film oxidized at 1100 °C is steeper than that of the film oxidized at 1000 °C.
KW - Cantilevers
KW - P
KW - Residual stress
KW - Rotating beam structures
KW - Silicon films
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U2 - 10.1016/S0924-4247(97)80038-6
DO - 10.1016/S0924-4247(97)80038-6
M3 - Article
AN - SCOPUS:0003955364
SN - 0924-4247
VL - 54
SP - 684
EP - 689
JO - Sensors and Actuators, A: Physical
JF - Sensors and Actuators, A: Physical
IS - 1-3
ER -