TY - GEN
T1 - The submicron fabrication process for T gate with a flat head
AU - Su, Xiaoyu
AU - Ren, Zhongjing
AU - Sun, Hao
AU - Shi, Yong
AU - Pan, Quan
N1 - Publisher Copyright:
Copyright © 2018 ASME.
PY - 2018
Y1 - 2018
N2 - T gate structure is traditionally manufactured with a valley in its head, which requires the thickness of the head layer to thicker than the height of foot layer. As is presented in this paper, an innovative submicron fabrication process is investigated for T gate structures to construct a flat head in order to get rid of that constraint. In detail, the reason why conventional T gate fabrication cannot manufacture a flat head is analyzed, and then a general process for flat head T gate structure is proposed considering various resist and structure materials. After that, a typical submicron sample has been manufactured using aluminum and NiTi. Furthermore, the particular photo resists and recipes adopted in that sample are considered. To clearly illustrate the proposed technique as well as verify its feasibility, top views of the structure under optical microscope along with the measurement results of thickness after every step are recorded. According to those experimental results, the valley in T gate’s head is proved to be avoided during fabrication.
AB - T gate structure is traditionally manufactured with a valley in its head, which requires the thickness of the head layer to thicker than the height of foot layer. As is presented in this paper, an innovative submicron fabrication process is investigated for T gate structures to construct a flat head in order to get rid of that constraint. In detail, the reason why conventional T gate fabrication cannot manufacture a flat head is analyzed, and then a general process for flat head T gate structure is proposed considering various resist and structure materials. After that, a typical submicron sample has been manufactured using aluminum and NiTi. Furthermore, the particular photo resists and recipes adopted in that sample are considered. To clearly illustrate the proposed technique as well as verify its feasibility, top views of the structure under optical microscope along with the measurement results of thickness after every step are recorded. According to those experimental results, the valley in T gate’s head is proved to be avoided during fabrication.
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U2 - 10.1115/DETC2018-85581
DO - 10.1115/DETC2018-85581
M3 - Conference contribution
AN - SCOPUS:85056847651
T3 - Proceedings of the ASME Design Engineering Technical Conference
BT - 23rd Design for Manufacturing and the Life Cycle Conference; 12th International Conference on Micro- and Nanosystems
T2 - ASME 2018 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference, IDETC/CIE 2018
Y2 - 26 August 2018 through 29 August 2018
ER -