Thermodynamics of the Si-N-0 System and Kinetic Modeling of Oxidation of Si3N4

Honghua Du, Richard E. Tressler, Karl E. Spear

Research output: Contribution to journalArticlepeer-review

104 Scopus citations

Abstract

Thermodynamic calculations were performed on the Si-N-0 system, and the results are discussed in relation to the thermal oxidation of crystalline Si3N4. Based on our previous oxidation results at temperatures in the range of 1200°-1400°C and oxygen partial pressures of 0.05-1.0 atm in oxygen-argon or oxygen-nitrogen-argon gas mixtures, a kinetic model describing the growth of the oxidation scale on Si3N4 has been developed. Good agreement between the experimental results and the model supports our hypothesis that the oxidation of pure and dense Si3N4 under the above conditions is probably rate-limited by molecular oxygen diffusion through the structurally dense Si2N20 intermediate phase.

Original languageEnglish
Pages (from-to)3210-3215
Number of pages6
JournalJournal of the Electrochemical Society
Volume136
Issue number11
DOIs
StatePublished - Nov 1989

Fingerprint

Dive into the research topics of 'Thermodynamics of the Si-N-0 System and Kinetic Modeling of Oxidation of Si3N4'. Together they form a unique fingerprint.

Cite this