Thermopiezoelectric and nonlinear electromechanical effects in quantum dots and nanowires

Sunil Patil, M. Bahrami-Samani, R. V.N. Melnik, M. Toropova, Jean Zu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We report thermopiezoelectric (TPE) and nonlinear electromechanical (NEM) effects in quantum dots (QD) and nanowires (NW) analyzed with a model based on coupled thermal, electric and mechanical balance equations. Several representative examples of low dimensional semiconductor structures (LDSNs) are studied. We focus mainly on GaN/AlN QDs and CdTe/ZnTe NWs which we analyze for different geometries. GaN/AlN nano systems are observed to be more sensitive to thermopiezoelectric effects than those of CdTe/ZnTe. Furthermore, noticeable qualitative and quantitative variations in electromechanical fields are observed as a consequence of taking into account NEM effects, in particular in GaN/AlN QDs.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 29th International Conference, ICPS 29
Pages327-328
Number of pages2
DOIs
StatePublished - 2009
Event29th International Conference on Physics of Semiconductors, ICPS 29 - Rio de Janeiro, Brazil
Duration: 27 Jul 20081 Aug 2008

Publication series

NameAIP Conference Proceedings
Volume1199
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference29th International Conference on Physics of Semiconductors, ICPS 29
Country/TerritoryBrazil
CityRio de Janeiro
Period27/07/081/08/08

Keywords

  • Nanowires
  • Nonlinear electromechanical effects
  • Quantum dots
  • Thermopiezoelectric

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