Time-resolved optical studies of amorphous CoSi thin film crystallization

M. Libera, T. Kim, K. Siangchaew, L. Clevenger, Q. Hong

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Time-resolved reflection and transmission measurements during heating are coupled with transmission electron microscopy (TEM) to study the crystallization of amorphous 75nm Co49Si51 films. The reflection decreases and the transmission increases upon crystallization. Optical data are converted to a measure of the fraction crystallized, X=X(T,t). A Kissinger analysis gives an activation energy for crystallization of 1.1 eV. TEM analysis of films crystallized in-situ show they are principally CoSi with a small amount of CoSi. These results are being used for kinetic modelling of crystallization of amorphous Co-silicide films for potential use in Si mosfet and bipolar technologies.

Original languageEnglish
Title of host publicationEvolution of Surface and Thin Film Microstructure
EditorsHarry A. Atwater, Eric Chason, Marcia H. Grabow, Max G. Lagally
Pages715-718
Number of pages4
StatePublished - 1993
EventProceedings of the 1992 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: 30 Nov 19924 Dec 1992

Publication series

NameMaterials Research Society Symposium Proceedings
Volume280
ISSN (Print)0272-9172

Conference

ConferenceProceedings of the 1992 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period30/11/924/12/92

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