TY - JOUR
T1 - Transconductance and Coulomb blockade properties of in-plane grown carbon nanotube field effect transistors
AU - Ai, Nan
AU - Sul, Onejae
AU - Begliarbekov, Milan
AU - Song, Qiang
AU - Kumar, Kitu
AU - Choi, Daniel S.
AU - Yang, Eui Hyeok
AU - Strauf, Stefan
PY - 2010/6
Y1 - 2010/6
N2 - Single electron transistors (SETs) made from single wall carbon nanotubes (SWCNTs) are promising for quantum electronic devices operating with ultra-low power consumption and allow fundamental studies of electron transport. We report on SETs made by registered in-plane growth utilizing tailored nanoscale catalyst patterns and chemical vapor deposition. Metallic SWCNTs have been removed by an electrical burn-in technique and the common gate hysteresis was removed using PMMA and baking, leading to field effect transistors with large on/off ratios up to 105. Further segmentation into 200 nm short semiconducting SWCNT devices created quantum dots which display conductance oscillations in the Coulomb blockade regime. The demonstrated utilization of registered in-plane growth opens possibilities to create novel SET device geometries which are more complex, i.e., laterally ordered and scalable, as required for advanced quantum electronic devices.
AB - Single electron transistors (SETs) made from single wall carbon nanotubes (SWCNTs) are promising for quantum electronic devices operating with ultra-low power consumption and allow fundamental studies of electron transport. We report on SETs made by registered in-plane growth utilizing tailored nanoscale catalyst patterns and chemical vapor deposition. Metallic SWCNTs have been removed by an electrical burn-in technique and the common gate hysteresis was removed using PMMA and baking, leading to field effect transistors with large on/off ratios up to 105. Further segmentation into 200 nm short semiconducting SWCNT devices created quantum dots which display conductance oscillations in the Coulomb blockade regime. The demonstrated utilization of registered in-plane growth opens possibilities to create novel SET device geometries which are more complex, i.e., laterally ordered and scalable, as required for advanced quantum electronic devices.
KW - Carbon Nanotubes
KW - Coulomb Blockade
KW - Field-Effect Transistor
KW - Gate Hysteresis
KW - In-Plane Growth
KW - Single Electron Transistor
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U2 - 10.1166/nnl.2010.1057
DO - 10.1166/nnl.2010.1057
M3 - Article
AN - SCOPUS:79952318099
SN - 1941-4900
VL - 2
SP - 73
EP - 78
JO - Nanoscience and Nanotechnology Letters
JF - Nanoscience and Nanotechnology Letters
IS - 2
ER -