TY - JOUR
T1 - Transfer patterning of large-area graphene nanomesh via holographic lithography and plasma etching
AU - Ding, Junjun
AU - Du, Ke
AU - Wathuthanthri, Ishan
AU - Choi, Chang Hwan
AU - Fisher, Frank T.
AU - Yang, Eui Hyeok
N1 - Publisher Copyright:
© 2014 American Vacuum Society.
PY - 2014/11/1
Y1 - 2014/11/1
N2 - The authors present a high-throughput fabrication technique to create a large-area graphene nanomesh (GNM). A patterned negative photoresist layer was used as an etch mask atop chemical vapor deposition grown graphene on Cu foil. Shielded by the periodic nanopatterned photoresist mask, the graphene layer was selectively etched using O2 plasma, forming a GNM layer. A poly(methyl methacrylate) layer was spun on the GNM atop copper foil, and the GNM was subsequently transferred onto a SiO2/Si substrate by etching away the copper foil. Large-area (5 × 5 cm), periodic (500 and 935 nm in pitch), uniform, and flexible GNMs were successfully fabricated with precisely controlled pore sizes (200-900 nm) and neck widths (down to ∼20 nm) by adjusting the pattern generation of holographic lithography and the O2 plasma etching process parameters. This holographic lithography-based transfer method provides a low-cost manufacturing alternative for large-area, nanoscale-patterned GNMs on an arbitrary substrate.
AB - The authors present a high-throughput fabrication technique to create a large-area graphene nanomesh (GNM). A patterned negative photoresist layer was used as an etch mask atop chemical vapor deposition grown graphene on Cu foil. Shielded by the periodic nanopatterned photoresist mask, the graphene layer was selectively etched using O2 plasma, forming a GNM layer. A poly(methyl methacrylate) layer was spun on the GNM atop copper foil, and the GNM was subsequently transferred onto a SiO2/Si substrate by etching away the copper foil. Large-area (5 × 5 cm), periodic (500 and 935 nm in pitch), uniform, and flexible GNMs were successfully fabricated with precisely controlled pore sizes (200-900 nm) and neck widths (down to ∼20 nm) by adjusting the pattern generation of holographic lithography and the O2 plasma etching process parameters. This holographic lithography-based transfer method provides a low-cost manufacturing alternative for large-area, nanoscale-patterned GNMs on an arbitrary substrate.
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U2 - 10.1116/1.4895667
DO - 10.1116/1.4895667
M3 - Article
AN - SCOPUS:84949115578
SN - 2166-2746
VL - 32
JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
IS - 6
M1 - 06FF01
ER -