Abstract
A transient semiconductor device simulation model based on the recently developed Lei-Ting hydrodynamic balance equations is presented. Unlike other hydrodynamic models, where the various relaxation rates are imported from Monte Carlo calculations or simply assumed to be constant, our model calculates these relaxation rates within the simulation process, as functions of the electron drift velocity, electron temperature, as well as the electron density. Without any complicated mathematics, a decoupled method with a relatively large time step has been applied to the transient simulation on a one-dimensional ballistic diode.
Original language | English |
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Pages (from-to) | 1891-1900 |
Number of pages | 10 |
Journal | Journal of Applied Physics |
Volume | 80 |
Issue number | 3 |
DOIs | |
State | Published - 1 Aug 1996 |