TY - JOUR
T1 - Two-Qubit Conditional Phase Gate in Laser-Excited Semiconductor Quantum Dots Using the Quantum Zeno Effect
AU - Xu, K. J.
AU - Huang, Y. P.
AU - Moore, M. G.
AU - Piermarocchi, C.
PY - 2009/8/6
Y1 - 2009/8/6
N2 - We propose a scheme for a two-qubit conditional quantum Zeno phase gate for semiconductor quantum dots. The proposed system consists of two charged dots and one ancillary neutral dot driven by a laser pulse tuned to the exciton resonance. The primary decoherence mechanism is phonon-assisted exciton relaxation, which can be viewed as continuous monitoring by the environment. Because of the Zeno effect, a strong possibility of emission is sufficient to strongly modify the coherent dynamics, with negligible probability of actual emission. We solve analytically the master equation and simulate the dynamics of the system using a realistic set of parameters. In contrast to standard schemes, larger phonon relaxation rates increase the fidelity of the operations.
AB - We propose a scheme for a two-qubit conditional quantum Zeno phase gate for semiconductor quantum dots. The proposed system consists of two charged dots and one ancillary neutral dot driven by a laser pulse tuned to the exciton resonance. The primary decoherence mechanism is phonon-assisted exciton relaxation, which can be viewed as continuous monitoring by the environment. Because of the Zeno effect, a strong possibility of emission is sufficient to strongly modify the coherent dynamics, with negligible probability of actual emission. We solve analytically the master equation and simulate the dynamics of the system using a realistic set of parameters. In contrast to standard schemes, larger phonon relaxation rates increase the fidelity of the operations.
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U2 - 10.1103/PhysRevLett.103.037401
DO - 10.1103/PhysRevLett.103.037401
M3 - Article
AN - SCOPUS:68649129083
SN - 0031-9007
VL - 103
JO - Physical Review Letters
JF - Physical Review Letters
IS - 3
M1 - 037401
ER -