TY - JOUR
T1 - Ultrahigh-Q guided mode resonances in an All-dielectric metasurface
AU - Huang, Lujun
AU - Jin, Rong
AU - Zhou, Chaobiao
AU - Li, Guanhai
AU - Xu, Lei
AU - Overvig, Adam
AU - Deng, Fu
AU - Chen, Xiaoshuang
AU - Lu, Wei
AU - Alù, Andrea
AU - Miroshnichenko, Andrey E.
N1 - Publisher Copyright:
© 2023, The Author(s).
PY - 2023/12
Y1 - 2023/12
N2 - High quality(Q) factor optical resonators are indispensable for many photonic devices. While very large Q-factors can be obtained theoretically in guided-mode settings, free-space implementations suffer from various limitations on the narrowest linewidth in real experiments. Here, we propose a simple strategy to enable ultrahigh-Q guided-mode resonances by introducing a patterned perturbation layer on top of a multilayer-waveguide system. We demonstrate that the associated Q-factors are inversely proportional to the perturbation squared while the resonant wavelength can be tuned through material or structural parameters. We experimentally demonstrate such high-Q resonances at telecom wavelengths by patterning a low-index layer on top of a 220 nm silicon on insulator substrate. The measurements show Q-factors up to 2.39 × 105, comparable to the largest Q-factor obtained by topological engineering, while the resonant wavelength is tuned by varying the lattice constant of the top perturbation layer. Our results hold great promise for exciting applications like sensors and filters.
AB - High quality(Q) factor optical resonators are indispensable for many photonic devices. While very large Q-factors can be obtained theoretically in guided-mode settings, free-space implementations suffer from various limitations on the narrowest linewidth in real experiments. Here, we propose a simple strategy to enable ultrahigh-Q guided-mode resonances by introducing a patterned perturbation layer on top of a multilayer-waveguide system. We demonstrate that the associated Q-factors are inversely proportional to the perturbation squared while the resonant wavelength can be tuned through material or structural parameters. We experimentally demonstrate such high-Q resonances at telecom wavelengths by patterning a low-index layer on top of a 220 nm silicon on insulator substrate. The measurements show Q-factors up to 2.39 × 105, comparable to the largest Q-factor obtained by topological engineering, while the resonant wavelength is tuned by varying the lattice constant of the top perturbation layer. Our results hold great promise for exciting applications like sensors and filters.
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U2 - 10.1038/s41467-023-39227-5
DO - 10.1038/s41467-023-39227-5
M3 - Article
C2 - 37301939
AN - SCOPUS:85161679124
VL - 14
JO - Nature Communications
JF - Nature Communications
IS - 1
M1 - 3433
ER -