Valley-selective topologically ordered states in irradiated bilayer graphene

Chunlei Qu, Chuanwei Zhang, Fan Zhang

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Gapless bilayer graphene is susceptible to a variety of spontaneously gapped states. As predicted by theory and observed by experiment, the ground state is, however, topologically trivial, because a valley-independent gap is energetically favorable. Here, we show that under the application of interlayer electric field and circularly polarized light, one valley can be selected to exhibit the original interaction instability while the other is frozen out. Tuning this Floquet system stabilizes multiple competing topologically ordered states, distinguishable by edge transport and circular dichroism. Notably, quantized charge, spin, and valley Hall conductivities coexist in one stabilized state.

Original languageEnglish
Article number011005
Journal2D Materials
Volume5
Issue number1
DOIs
StatePublished - Jan 2018

Keywords

  • Floquet physics
  • anomalous Hall
  • bilayer graphene
  • quantum Hall
  • spin Hall
  • valley Hall

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