TY - JOUR
T1 - Valley-selective topologically ordered states in irradiated bilayer graphene
AU - Qu, Chunlei
AU - Zhang, Chuanwei
AU - Zhang, Fan
N1 - Publisher Copyright:
© 2017 IOP Publishing Ltd.
PY - 2018/1
Y1 - 2018/1
N2 - Gapless bilayer graphene is susceptible to a variety of spontaneously gapped states. As predicted by theory and observed by experiment, the ground state is, however, topologically trivial, because a valley-independent gap is energetically favorable. Here, we show that under the application of interlayer electric field and circularly polarized light, one valley can be selected to exhibit the original interaction instability while the other is frozen out. Tuning this Floquet system stabilizes multiple competing topologically ordered states, distinguishable by edge transport and circular dichroism. Notably, quantized charge, spin, and valley Hall conductivities coexist in one stabilized state.
AB - Gapless bilayer graphene is susceptible to a variety of spontaneously gapped states. As predicted by theory and observed by experiment, the ground state is, however, topologically trivial, because a valley-independent gap is energetically favorable. Here, we show that under the application of interlayer electric field and circularly polarized light, one valley can be selected to exhibit the original interaction instability while the other is frozen out. Tuning this Floquet system stabilizes multiple competing topologically ordered states, distinguishable by edge transport and circular dichroism. Notably, quantized charge, spin, and valley Hall conductivities coexist in one stabilized state.
KW - Floquet physics
KW - anomalous Hall
KW - bilayer graphene
KW - quantum Hall
KW - spin Hall
KW - valley Hall
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U2 - 10.1088/2053-1583/aa9471
DO - 10.1088/2053-1583/aa9471
M3 - Article
AN - SCOPUS:85039428680
VL - 5
JO - 2D Materials
JF - 2D Materials
IS - 1
M1 - 011005
ER -