X-Band CMOS Rectifier With 4% Efficiency at -35 dBm for Wireless Power Transmission

Troy Buhr, Aydin I. Karsilayan, Jose Silva-Martinez, Christopher Rodenbeck, Brian Tierney, Yanghyo Kim

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

This paper proposes a radio frequency (RF) rectifier topology for low-power wireless power transmission (WPT) applications in the X band. The rectifier consists of a biased PMOS pair and is matched to the RF signal source impedance using a PCB transmission line (TL) matching network. It is demonstrated that a clever optimization of the bias voltage enables the rectifier to achieve greater sensitivity and efficiency than previous works at X band. The rectifier was designed in a 45 nm silicon-on-insulator (SOI) process and operates at a frequency of 9.64 GHz. It achieves a power conversion efficiency (PCE) of 4% and 46% at power levels of -35 dBm and -10 dBm, respectively.

Original languageEnglish
Pages (from-to)6792-6801
Number of pages10
JournalIEEE Access
Volume11
DOIs
StatePublished - 2023

Keywords

  • Power conversion efficiency
  • X band
  • rectifier
  • wireless power transmission

Fingerprint

Dive into the research topics of 'X-Band CMOS Rectifier With 4% Efficiency at -35 dBm for Wireless Power Transmission'. Together they form a unique fingerprint.

Cite this