TY - JOUR
T1 - X-Band CMOS Rectifier With 4% Efficiency at -35 dBm for Wireless Power Transmission
AU - Buhr, Troy
AU - Karsilayan, Aydin I.
AU - Silva-Martinez, Jose
AU - Rodenbeck, Christopher
AU - Tierney, Brian
AU - Kim, Yanghyo
N1 - Publisher Copyright:
© 2013 IEEE.
PY - 2023
Y1 - 2023
N2 - This paper proposes a radio frequency (RF) rectifier topology for low-power wireless power transmission (WPT) applications in the X band. The rectifier consists of a biased PMOS pair and is matched to the RF signal source impedance using a PCB transmission line (TL) matching network. It is demonstrated that a clever optimization of the bias voltage enables the rectifier to achieve greater sensitivity and efficiency than previous works at X band. The rectifier was designed in a 45 nm silicon-on-insulator (SOI) process and operates at a frequency of 9.64 GHz. It achieves a power conversion efficiency (PCE) of 4% and 46% at power levels of -35 dBm and -10 dBm, respectively.
AB - This paper proposes a radio frequency (RF) rectifier topology for low-power wireless power transmission (WPT) applications in the X band. The rectifier consists of a biased PMOS pair and is matched to the RF signal source impedance using a PCB transmission line (TL) matching network. It is demonstrated that a clever optimization of the bias voltage enables the rectifier to achieve greater sensitivity and efficiency than previous works at X band. The rectifier was designed in a 45 nm silicon-on-insulator (SOI) process and operates at a frequency of 9.64 GHz. It achieves a power conversion efficiency (PCE) of 4% and 46% at power levels of -35 dBm and -10 dBm, respectively.
KW - Power conversion efficiency
KW - X band
KW - rectifier
KW - wireless power transmission
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U2 - 10.1109/ACCESS.2023.3237647
DO - 10.1109/ACCESS.2023.3237647
M3 - Article
AN - SCOPUS:85147277726
VL - 11
SP - 6792
EP - 6801
JO - IEEE Access
JF - IEEE Access
ER -